Transition metal dichalcogenide (TMD) monolayers have been the subject of much interest due to their electronic and optical properties. However, the sensitivity of TMDs makes them susceptible to contamination and degradation. Dielectric encapsulation of TMDs with hexagonal boron nitride (hBN) has therefore been suggested as a way of protecting TMDs and improving device performance. However, the multiple transfers of hBN and TMDs required for encapsulation may result in unwanted contaminants or dopants. This experiment investigated the possible ways of preparing an MoS2-hBN heterostructure through chemical vapor deposition. It was found that, using a precursor solution of ammonium molybdate tetrahydrate and sodium chloride, multilayer MoS2 was able to grow on top of a monolayer hBN surface with the hBN still intact. This demonstrates the promise of large scale synthesis of MoS2-hBN heterostructures, which would be highly advantageous in future device applications.